Surface passivation of GaAs by ultra-thin cubic GaN layer
| Autor: | Hideki Hasegawa, Tamotsu Hashizume, S Sanguan Anantathanasarn, Shinya Ootomo |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Photoluminescence Passivation Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy Electron diffraction Layer (electronics) Stoichiometry Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. :456-461 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(00)00077-5 |
| Popis: | Attempts were made to passivate the GaAs (001) surface by a pseudomorphic ultra-thin cubic GaN layer formed by a nitrogen radical (N-radical) or nitrogen plasma irradiation technique. Reflection high-energy electron diffraction (RHEED) pattern observations and detailed X-ray photoelectron spectroscopy (XPS) analysis have shown that ultra-thin cubic GaN layer on GaAs (001) surface with desirable surface stoichiometry can be realized with the optimization of surface nitridation process parameters. The passivation effects, characterized by ultra-high vacuum photoluminescence (UHV PL) analysis, revealed strong enhancement in band-edge PL intensity of GaAs after passivation as large as a factor of 10 when compared with the as-grown clean molecular beam epitaxy (MBE) GaAs surface. |
| Databáze: | OpenAIRE |
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