Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures
| Autor: | Didier Lippens, Olivier Vanbésien, F. Podevin |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Condensed matter physics business.industry Wide-bandgap semiconductor Resonant-tunneling diode General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Thermal conduction Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Semiconductor chemistry Optoelectronics business Quantum Quantum tunnelling |
| Zdroj: | Journal of Applied Physics. 89:6247-6252 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1359756 |
| Popis: | Quantum calculations of the current–voltage characteristics of metal/wide-gap/narrow-gap semiconductor heterostructures have been performed in order to analyze the pure tunneling and thermally assisted current contributions. The InAlAs/InGaAs material system lattice matched to an InP substrate, with the InAlAs layer acting as a single semiconductor barrier, shows pronounced quantum size effects which yield resonant tunneling paths. On the basis of the nonlinear current–voltage characteristics, it is shown that an optimum barrier configuration can be found. Some consequences from the device viewpoint are finally discussed. |
| Databáze: | OpenAIRE |
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