Characterization of epitaxial layers grown on 4H-SiC (0 0 0 −1) substrates

Autor:	Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Rok vydání:	2023
Předmět:	Inorganic Chemistry Materials Chemistry Condensed Matter Physics
Zdroj:	Journal of Crystal Growth. 604:127048
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2022.127048
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7a0386f9f5546d5d2ee51ffbf3276dc6 https://doi.org/10.1016/j.jcrysgro.2022.127048 Zobrazit plný text záznamu Full Text from ScienceDirect