Distribution of incident ions and retained dose analysis for a wedge‐shaped target in plasma source ion implantation

Autor:	J. R. Conrad, Kumar Sridharan, R. P. Fetherston, Ngoc C. Tran, Shamim M. Malik, D. E. Muller
Rok vydání:	1995
Předmět:	Debye sheath Materials science Silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Plasma Wedge (geometry) Fluence Ion symbols.namesake Ion implantation chemistry Ionization symbols
Zdroj:	Journal of Applied Physics. 77:1015-1019
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.358959
Popis:	A wedge‐shaped target was implanted with nitrogen ions using the plasma source ion implantation process, in order to understand the effects of the target edges on the energy and fluence distribution of incident ions. Experimental measurements and analysis of retained dose on silicon samples affixed on the surface of the target, showed results consistent with those predicted by theoretical models. Higher retained dose and greater implantation depths were observed in the vicinity of the edge contained by the normal angle as compared to the edges contained by the acute angles. The target face with smaller area accumulated, on the average, higher dose compared to the face with the larger area.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::79f731d50b381f6136cbc592a56abe9f https://doi.org/10.1063/1.358959 Zobrazit plný text záznamu