| Autor: |
U. Weinert, R. Schorner, E. Baudelot, Dethard Peters, Peter Friedrichs, K.O. Dohnke, H. Mitlehner, D. Stephani |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094). |
| DOI: |
10.1109/ispsd.2000.856809 |
| Popis: |
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs and JFETs capable to block 1800 V with a specific on-resistance of 47 m/spl Omega/ cm/sup 2/ and 14.5 m/spl Omega/ cm/sup 2/, resp., are discussed. However, there are additional advantages making SiC devices attractive for the system designer. The authors present fast recovery of the 6H-SiC MOSFET reverse diode (Q/sub rr/ 30 nC, t/sub rr/ 20 ns) and fast switching as well as short circuit capability (1 ms) of vertical VJFETs. Finally, a short outlook to future SiC switching devices is given. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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