Silicon Heterojunction Solar Cell Development with PRiMELiNE HJT Platform at Roth & Rau
| Autor: | Citarella, G., Grimm, M., Schmidbauer, S., Ahn, K.H., Erdmann, M., Schulze, T., Plettig, M., Gruber, B., Hausmann, J., Böhme, R., Stein, W., Müller, D., Weinke, M., Winkler, S., Zerres, T., Vetter, E., Bätzner, D., Strahm, B., Lachenal, D., Wahli, G., Wuensch, F., Papet, P., Andrault, Y., Guerin, C., Buechel, A., Rau, B. |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: | |
| DOI: | 10.4229/26theupvsec2011-2ao.2.5 |
| Popis: | 26th European Photovoltaic Solar Energy Conference and Exhibition; 865-870 The interest in heterojunction (HJ) solar cells made with a crystalline silicon (c-Si) absorber and doped hydrogenated amorphous silicon (a-Si:H) layers as emitter and back surface field is growing, lately mainly in expanding further this cell technology in mass production. This technology is very convenient because it is suited for high efficiency solar cell concepts. The advantage of HJ technology is a low temperature process and convenient production costs because long thermal processes are replaced with fast low temperature plasma deposition processes. HJ technology is also promising for future applications on very thin wafers or c-Si foils: in this case the standard technology which is so far in mass production is not at all applicable, and novel technologies based on thermal processes would be problematic as well. Excellent results with HJ have been achieved in a research line at Roth&Rau (R&R) in Neuchatel/Switzerland, and the same process has been transferred very fast and successfully in a pilot line with production tools with a standard industrial throughput of 2400 Wafers/hour at R&R in Hohenstein/Germany. Efficiency of 21,5% have been achieved on small cells, and over 20% also on Cz c-Si wafers of 5 and 6 inch size. Module encapsulation is also at a very advanced state. |
| Databáze: | OpenAIRE |
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