Broadening of the below-threshold near-field profile of GaAs quantum-well lasers due to photon recycling
| Autor: | Kathleen Meehan, M. Wober, P. Gavrilovic, M. S. O’Neill |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Photon
Materials science business.industry Ambipolar diffusion Physics::Optics Condensed Matter Physics Laser Atomic and Molecular Physics and Optics law.invention Semiconductor laser theory Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Quantum well laser Electrical and Electronic Engineering Atomic physics business Quantum well Diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 31:623-626 |
| ISSN: | 0018-9197 |
| Popis: | The subthreshold near-field profile of single quantum well laser diodes was studied experimentally and theoretically. Wide gain-guided stripes as well as single lateral mode ridge-waveguide diodes mere investigated. In both types of device, the measured width of the near-field was significantly wider than the width predicted by the conventional theory which includes ambipolar carrier diffusion as the only spatial broadening mechanism. A new model that invokes close to 100% efficient photon recycling was developed to explain the observed near-field profiles. > |
| Databáze: | OpenAIRE |
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