A Highly Efficient and Linear Power Amplifier for 28-GHz 5G Phased Array Radios in 28-nm CMOS
| Autor: | Vladimir Aparin, Sherif Shakib, Hyun-Chul Park, Kamran Entesari, Jeremy D. Dunworth |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
business.industry Phased array Orthogonal frequency-division multiplexing 020208 electrical & electronic engineering Bandwidth (signal processing) Impedance matching Electrical engineering dBc 020206 networking & telecommunications 02 engineering and technology Amplitude modulation CMOS 0202 electrical engineering electronic engineering information engineering Radio frequency Electrical and Electronic Engineering business |
| Zdroj: | IEEE Journal of Solid-State Circuits. 51:3020-3036 |
| ISSN: | 1558-173X 0018-9200 |
| Popis: | This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-generation (5G) mobile user equipment integrated phased array transceivers. The output stage of the PA is first optimized for power-added efficiency (PAE) at a desired error vector magnitude (EVM) and range given a challenging 5G uplink use case scenario. Then, inductive source degeneration in the optimized output stage is shown to enable its embedding into a two-stage transformer-coupled PA; by broadening interstage impedance matching bandwidth and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured $P_{\text {out}}$ /PAE at −25 dBc EVM for a 250 MHz-wide 64-quadrature amplitude modulation orthogonal frequency division multiplexing signal with 9.6 dB peak-to-average power ratio. The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6 dB back-off from saturation. To the best of the authors’ knowledge, these are the highest measured PAE values among published ${K}$ - and Ka -band CMOS PAs. |
| Databáze: | OpenAIRE |
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