Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs
| Autor: | Alain Cappy, Daniel Pardo, Virginie Hoel, Tomas Gonzalez, Javier Mateos |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Monte Carlo method High-electron-mobility transistor Dielectric Condensed Matter Physics Noise (electronics) Signal Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Computational physics Electron degeneracy pressure Electronic engineering Dynamic Monte Carlo method Electrical and Electronic Engineering Safety Risk Reliability and Quality Communication channel |
| Zdroj: | Microelectronics Reliability. 41:73-77 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(00)00211-0 |
| Popis: | We present a microscopic analysis of electronic noise in short channel δ-doped AlInAs/GaInAs HEMTs. A classical Monte Carlo device simulation, appropriately modified to locally introduce the effects of electron degeneracy and nonequilibrium screening, is used for the calculations. Even if the energy quantization in the channel is not taken into account in the Monte Carlo model, its validity has been checked by means of the comparison with experimental results of static characteristics, small signal behavior and noise performance in a recessed 0.1 μm T-gate δ-doped HEMT (InP based). The geometry and layer structure of the simulated HEMT is completely realistic, including recessed gate and δ-doping configuration and also the T-shape of the gate and the dielectric disposition has been included in the simulation |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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