640 mV open-circuit voltage multicrystalline silicon solar cells: role of base doping on device parameters
| Autor: | Le Quang Nam, H.E. Elgamel, Robert Mertens, M. Rodot, Sivanarayanamoorthy Sivoththaman, Johan Nijs, Moustafa Y. Ghannam, D. Sarti |
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| Rok vydání: | 1995 |
| Předmět: |
chemistry.chemical_classification
Record value Materials science Base (chemistry) Silicon Hydrogen Renewable Energy Sustainability and the Environment business.industry Open-circuit voltage Doping chemistry.chemical_element Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Optoelectronics business Voltage |
| Zdroj: | Solar Energy Materials and Solar Cells. 36:99-105 |
| ISSN: | 0927-0248 |
| Popis: | The compensatory behaviour of open-circuit voltage ( V OC ) and short-circuit current ( J SC ) in function of the base resistivity of multicrystalline silicon (Polix) solar cells (4 cm 2 ) is investigated. Thin substrates (200 μm) with base resistivities between 0.2 Ω.cm and 2.5 Ω.cm (boron doped) are used in a laboratory high efficiency process (including Back Surface Field, hydrogen and oxide passivation, selective and homogeneous emitters) to test the limits, in terms of V OC and J SC that can be reached on this material. On low resistivity substrates (0.2 Ω.cm) a record value of 640 mV (independently confirmed by NREL) is achieved for the open-circuit voltage which largely compensates for the relatively small decrease in J SC . This high value of V OC resulted in a cell efficiency of 16.8%. It is found that provided efficient hydrogen passivation treatments are performed on the solar cells, the efficiencies of solar cells fabricated on the lower resistivity substrates are larger than those achieved on the higher resistivity material. |
| Databáze: | OpenAIRE |
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