Study on the Crucial Factors for Deposition Rate in the High-rate Deposition Process of Polycrystalline Silicon Films by Atmospheric Pressure Plasma CVD

Autor:	Yuzo Mori, Hiromasa Ohmi, Kiyoshi Yasutake, Yasuji Nakahama, Hiroaki Kakiuchi, Kumayasu Yoshii, Yusuke Ebata
Rok vydání:	2004
Předmět:	High rate Deposition rate Materials science Carbon film Polycrystalline silicon Chemical engineering Plasma-enhanced chemical vapor deposition engineering Atmospheric-pressure plasma engineering.material Deposition process Plasma processing
Zdroj:	Journal of the Japan Society for Precision Engineering, Contributed Papers. 70:1418-1422
ISSN:	1881-8722 1348-8724
DOI:	10.2493/jspe.70.1418
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::79bc0b3b66253cc935efed4cb802d584 https://doi.org/10.2493/jspe.70.1418 Zobrazit plný text záznamu