P-76: Effect of a-IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

Autor:	Md. Masum Billah, Md. Mehedi Hasan, Jae Gwang Um, Jin Jang, Duk Young Jeong
Rok vydání:	2017
Předmět:	010302 applied physics Materials science Variation (linguistics) business.industry 0103 physical sciences Electronic engineering Optoelectronics 02 engineering and technology 021001 nanoscience & nanotechnology 0210 nano-technology business 01 natural sciences Dual (category theory)
Zdroj:	SID Symposium Digest of Technical Papers. 48:1528-1531
ISSN:	0097-966X
DOI:	10.1002/sdtp.11940
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::79b40578c8a426a3c35a19773109d307 https://doi.org/10.1002/sdtp.11940 Zobrazit plný text záznamu Plný text