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A theoretical study of the photoconductivity decay method is presented for determining excess carrier lifetime of p-type HgCdTe when recombinations are due to trapping centers. The solutions to the equations describing the transient decay are numerically evaluated and compared with steady-state lifetimes determined using the Shockley-Read equations. It is found for p-type HgCdTe that for short pulse width photoexcitation, the minority carrier lifetime can be obtained from photoconductivity decay measurements.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
