Intraband inversion in semiconductors with ultrashort carrier lifetimes
| Autor: | L. Palmetshofer, R. A. Höpfel, K. F. Lamprecht, S. Juen |
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| Rok vydání: | 1992 |
| Předmět: |
Physics
business.industry Luminescence spectra Electron Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Thermalisation Semiconductor Femtosecond Materials Chemistry Electrical and Electronic Engineering Atomic physics Spectroscopy Luminescence business Electron distribution |
| Zdroj: | Semiconductor Science and Technology. 7:B151-B153 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H+-bombarded InP for different damage doses by means of femtosecond luminescence spectroscopy. The lifetime decreases down to 95 fs for a dose of 1016 cm-2 and the time-integrated luminescence spectrum of this sample is inverted. Taking into account the different thermalization and relaxation conditions for electrons and holes, they find that the time-averaged hole distribution is hot but thermalized, whereas the time-averaged electron distribution is inverted, meaning that the electron distribution function increases with increasing energy within the conduction band. |
| Databáze: | OpenAIRE |
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