| Autor: |
S. Yoo, P. Chin, A. Raghavan, Po-Hsin Liu, S. Nuttinck, J. Laskar, Richard Lai, J.I. Bergman, M.R. Murti, Michael E. Barsky, R. Grundbacher, J.J. Bautista |
| Rok vydání: |
2000 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Microwave Theory and Techniques. 48:2579-2587 |
| ISSN: |
0018-9480 |
| DOI: |
10.1109/22.899016 |
| Popis: |
In this paper, we present detailed on-wafer S-parameter and noise parameter measurements and modeling of ZnP/InAlAs/InGaAs high electron mobility transistors (0.1-/spl mu/m gate length) at cryogenic temperatures. Various physical effects influencing small-signal parameters, especially the radio-frequency (RF) transconductance and RF output resistance and their temperature dependence, are discussed in detail. Accurate on-wafer noise parameter measurements are carried out from 300 to 18 K, and the variation of the equivalent noise temperatures of drain and source (T/sub d/ and T/sub g/) are modeled against temperature. Based on these models, a cryogenic low-noise amplifier in the K/spl alpha/-band is developed with a record low noise temperature of 10 K. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
