Generation and minority‐carrier leakage along GaAs surfaces
| Autor: | Michael R. Melloch, J. A. Cooper, Z. G. Ling, Theresa S. Mayer |
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| Rok vydání: | 1994 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Materials science business.industry nutritional and metabolic diseases General Physics and Astronomy Electron-hole droplets Carrier leakage Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Computer Science::Hardware Architecture Condensed Matter::Materials Science Surface conductivity Capacitor law Optoelectronics business Leakage (electronics) |
| Zdroj: | Journal of Applied Physics. 75:2098-2104 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We describe electrical measurement on exposed surfaces of n‐ and p‐type GaAs. The n‐type surface exhibits substantial electron‐hole pair generation and the subsequent escape of generated holes by leakage along the surface. In contrast, the surface of p‐type GaAs does not exhibit measurable leakage of minority electrons. These results are significant for all GaAs devices and circuits which are sensitive to small leakage currents, and may provide important clues to the physical and electrical nature of exposed GaAs surfaces. |
| Databáze: | OpenAIRE |
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