Controlled Mass Flow of Low Volatility Liquid Source Materials

Autor: Lloyd F. Wright, Bruce C. Rhine, Alan D. Nolet, Mark A. Logan, Joseph R. Monkowski
Rok vydání: 1988
Předmět:
Zdroj: MRS Proceedings. 131
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-131-319
Popis: Chemical Vapor Deposition (CVD) of thin films for microelectronic devices has historically used source materials that are gases at room temperature [1]. The decision to use gases was largely a practical one based on the relative ease with which the flow of gaseous materials can be controlled. CVD of thin films plays a vital role in increased circuit density and performance of integrated circuits. Liquid sources offer alternative source composition, reaction kinetics and reaction mechanisms to optimize a given CVD process [2].For example, CVD films of silicon dioxide (oxide) and oxide films modified to lower the glass transition temperature such a borophosphosilicate glass (BPSG) have traditionally used gaseous source materials such as silane, diborane and phosphine [3]. An all liquid system of tetraethylorthosilicate (TEOS), triethylborate (TEB) and triethylphosphine (TEPhine) has been found to offer superior conformality and overall safety [4]. However, from a practical standpoint, the all liquid system has historically suffered from reliable, reproducible mass flow control.
Databáze: OpenAIRE
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