Electron Wind Induced Mass Transport in Sub-Micrometer Size Wires
| Autor: | A. Ramírez, Alfred Zehe, A. Patiño |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Void (astronomy)
Materials science Valence (chemistry) Silicon business.industry Mechanical Engineering chemistry.chemical_element Nanotechnology Integrated circuit Electron Condensed Matter Physics Electromigration law.invention chemistry Material selection Mechanics of Materials law Microelectronics Optoelectronics General Materials Science business |
| Zdroj: | Materials Science Forum. :463-468 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.480-481.463 |
| Popis: | Nanoscale metallic wires play a pivotal role in future microelectronics. Extremely high current densities, present in silicon-based integrated circuits, cause wire destruction by electron-wind induced atomic migration and void formation. In the present paper we elaborate a theoretical model, which describes the interaction of impurity-vacancy pairs. Criteria are given for an optimum material selection, based on the atomic valence of matrix and alloying metal, which reduce (or enhance) the probability of void formation. |
| Databáze: | OpenAIRE |
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