Diodes of nanocrystalline SiC on n−/n+-type epitaxial crystalline 6H-SiC
| Autor: | Chang Li, Wen Sheng Wei, Chunxi Zhang, Mingchang He, Junding Zheng |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy 01 natural sciences Cathode Nanocrystalline material Surfaces Coatings and Films law.invention Anode Semiconductor law Plasma-enhanced chemical vapor deposition 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer business Diode |
| Zdroj: | Applied Surface Science. 435:265-270 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2017.11.099 |
| Popis: | The diodes of nanocrystalline SiC on epitaxial crystalline (n−/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties. |
| Databáze: | OpenAIRE |
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