Nonstoichiometry problems of ZnSe: From single crystals to nanofilms
| Autor: | Nikolai Zhavoronkov, Igor Avetissov, Albert Davydov, Roman Avetisov, Andrew Khomyakov, Rasim Saifutyarov, Sergei Neustroev, Tran Khanh, Elena Mozhevitina |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Morphology (linguistics)
Materials science Vapor phase Metals and Alloys chemistry.chemical_element Mineralogy 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials 010309 optics chemistry Chemical engineering Sputtering 0103 physical sciences Thermal Materials Chemistry Thin film 0210 nano-technology Selenium Evaporator |
| Zdroj: | Thin Solid Films. 613:11-18 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2015.10.067 |
| Popis: | Selenium nonstoichiometry in ZnSe under bivariant and monovariant equilibriums was studied by a direct physical–chemical method. ZnSe single crystals grown from the melt and the vapor phase were used as starting materials. It was found out that at T > 720 K, overstoichiometric Se generates mainly electrically neutral defects. ZnSe thin films (50–300 nm) were prepared by vacuum thermal sputtering on “cold” glass substrates. To control the nonstoichiometry of the films, a specially designed two-chamber evaporator was used. The nonstoichiometry, electrical properties and morphology of the ZnSe films were investigated under various preparation conditions. It was demonstrated that it is possible to form p–n junction by varying the nonstoichiometry of ZnSe nanofilms. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect