Processing independent photoluminescence response of chemically etched porous silicon
| Autor: | S. D. Russell, M. J. Winton, Ronald Gronsky, J. A. Wolk |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Photoluminescence
Materials science Physics and Astronomy (miscellaneous) Silicon Dopant Passivation business.industry fungi technology industry and agriculture Analytical chemistry Nanocrystalline silicon chemistry.chemical_element macromolecular substances equipment and supplies Porous silicon stomatognathic system chemistry Etching (microfabrication) Optoelectronics business Porous medium |
| Zdroj: | Applied Physics Letters. 69:4026-4028 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.117859 |
| Popis: | Room temperature photoluminescence spectra from samples of chemically etched porous silicon were analyzed as a function of dopant type, dopant concentration, etchant chemistry, and etching times. In stark contrast to electrochemically etched porous silicon, no significant variations in peak location or width were observed to result from stain etching. This invariance of peak location is presumed to be due to either chemical or electronic passivation of the luminescent silicon nanostructures that prevents subsequent modification after their initial formation. |
| Databáze: | OpenAIRE |
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