Phase-Delay Cold-FET Pre-Distortion Linearizer for Millimeter-Wave CMOS Power Amplifiers

Autor:	Yu-Chung Hsu, Kun-You Lin, Kun-Yao Kao, Kuan-Wei Chen
Rok vydání:	2013
Předmět:	Engineering Radiation business.industry Amplifier Electrical engineering Condensed Matter Physics Power (physics) CMOS Linearizer Extremely high frequency Electronic engineering Field-effect transistor Cascode Electrical and Electronic Engineering business Group delay and phase delay
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 61:4505-4519
ISSN:	1557-9670 0018-9480
DOI:	10.1109/tmtt.2013.2288085
Popis:	A phase-delay cold-FET pre-distortion linearizer technique is proposed to improve the gain compensation ability compared with the conventional cold-FET pre-distortion linearizer. The gain expansion analysis of the power amplifier (PA) cascading with a pre-distortion linearizer and the comparison with the conventional linearizer and the proposed phase-delay linearizer are provided in this paper. To demonstrate the feasibility of this concept, a single-ended V-band cascode PA with the 90° phase-delay linearizer and a differential K-band common-source PA with the 180° phase-delay linearizer are developed to verify the characteristics. The V-band PA implemented in 90-nm CMOS process exhibits the output 1-dB compression power (OP1 dB) of 13.7 dBm and the power-added efficiency (PAE) at OP1 dB of 14.3%. The K-band PA implemented in 0.18-μm CMOS process demonstrates 17.5-dBm OP1 dB and 13.6% PAE at OP1 dB.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7965f11e473e661e3c9173834d0821cc https://doi.org/10.1109/tmtt.2013.2288085 Zobrazit plný text záznamu