Electron impact processes in voltage-controlled phase transition in vanadium dioxide thin films
| Autor: | I.B. Vendik, P.A. Turalchuk, E.A. Ryndin, N. V. Andreeva, V.V. Luchinin, D.A. Chigirev |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Phase transition
Materials science Hydrogen General Mathematics Applied Mathematics General Physics and Astronomy chemistry.chemical_element Statistical and Nonlinear Physics Atmospheric temperature range Thermal conduction Polaron 01 natural sciences 010305 fluids & plasmas chemistry Impurity Electrical resistivity and conductivity Chemical physics 0103 physical sciences Thin film 010301 acoustics |
| Zdroj: | Chaos, Solitons & Fractals. 142:110503 |
| ISSN: | 0960-0779 |
| DOI: | 10.1016/j.chaos.2020.110503 |
| Popis: | A study of the voltage-controlled phase transition mechanism in vanadium dioxide thin films was performed in the temperature range 65 – 295 K. Temperature-induced variation of I-V characteristics indicates the type of conductivity defined by space-charge limited currents (SCLC). Based on the analysis of the temperature dependence of sample resistivity, it was found that the dominant transport mechanism is a small polaron hopping conduction. The results of modeling together with obtained experimental data justify the influence of the parameters of trap distribution, associated with oxygen vacancies and hydrogen impurities, on the mechanism of the instability development in vanadium dioxide thin films. At relatively low trap density, the phase transition is more likely initiated electronically. At temperatures below 100 K an appearance of switching with memory is observed. An increase in the trap concentration provokes the prevalence of thermal process in the phase transition triggering. |
| Databáze: | OpenAIRE |
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