A GaAs Monolithic Phase Shifter for 30 GHz Application

Autor:	J. Geddes, P. Bauhahn, Vladimir Sokolov, C. Chao, T. Contolatis
Rok vydání:	2005
Předmět:	Materials science Fabrication business.industry Electrical engineering Differential phase Gallium arsenide chemistry.chemical_compound Ion implantation chemistry Insertion loss Optoelectronics Power MOSFET business Phase shift module
Zdroj:	Microwave and Millimeter-Wave Monolithic Circuits.
DOI:	10.1109/mcs.1983.1151039
Popis:	The design and performance of a GaAs monolithic 180 degrees one-bit phase shifter test circuit for Ka-band operation is presented. Over the 27.5 to 30 GHz band the measured differential phase shift is within 10 degrees of the ideal characteristic and the insertion loss is between 4 and 6 dB. The switching FETs are fabricated by ion implantation into LEC material using a power FET implant schedule. I-V characteristics are also presented for a self-aligned gate FET whose channel resistance is reduced by more than a factor of two relative to the power FET. This latter fabrication technique holds promise in reducing phase shifter insertion loss for mm-wave applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::794ffe70af46e09c0db8802cfdc1f4ec https://doi.org/10.1109/mcs.1983.1151039 Zobrazit plný text záznamu