Chemical composition of nitrogen–oxygen shallow donor complexes in silicon
| Autor: | F. Bittersberger, H. Ch. Alt, Andreas Dr. Dipl.-Phys. Huber, H. E. Wagner, W.v. Ammon, L. Koester |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Infrared spectroscopy Condensed Matter Physics Nitrogen Oxygen Electronic Optical and Magnetic Materials chemistry Limiting oxygen concentration Electrical and Electronic Engineering Absorption (chemistry) Chemical composition Shallow donor |
| Zdroj: | Physica B: Condensed Matter. :130-133 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2007.08.129 |
| Popis: | FTIR absorption measurements have been carried out on shallow donor transitions in silicon related to (N, O)-complexes. Growth of a nitrogen-doped float-zone ingot with an axial variation of the interstitial oxygen concentration from 16 up to 6×10 17 cm −3 allowed systematic investigation of the defect formation driven by mass-action laws. The energetically deepest shallow donor of the (N, O)-family has the composition NO. Other species contain up to three oxygen atoms. Implications of the results on the microscopic structure of (N, O)-related shallow donors are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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