The Effect of Hydrogen Doping on the Electrochemical Etching of Ion-Irradiated n-Type Silicon
| Autor: | M. B. H. Breese, Andrew A. Bettiol, H. D. Liang, Armin G. Aberle, S. Duttagupta, Thirumalai Venkatesan |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Hydrogen N type silicon Doping Inorganic chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Ion chemistry 0103 physical sciences Irradiation Electrochemical etching 0210 nano-technology |
| Zdroj: | ECS Journal of Solid State Science and Technology. 7:N110-N113 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0141808jss |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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