Interfacial structure in silicon nitride sintered with lanthanide oxide
| Autor: | A. Ziegler, Stephen J. Pennycook, Paul F. Becher, Gayle S. Painter, Robert O. Ritchie, Christian Dwyer, Michael J. Hoffmann, Nagoya Shibata, Raphaelle Satet, Michael K. Cinibulk, Nigel D. Browning, Graham B Winkelman, David J. H. Cockayne |
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| Rok vydání: | 2006 |
| Předmět: |
Lanthanide
Materials science Scanning electron microscope Mechanical Engineering Oxide Mineralogy Microstructure law.invention chemistry.chemical_compound chemistry Silicon nitride Chemical engineering Mechanics of Materials Transmission electron microscopy law Scanning transmission electron microscopy General Materials Science Electron microscope |
| Zdroj: | Journal of Materials Science. 41:4405-4412 |
| ISSN: | 1573-4803 0022-2461 |
| Popis: | Three independent research groups present a comparison of their structural analyses of prismatic interfaces in silicon nitride densified with the aid of lanthanide oxide Ln2O3. All three groups obtained scanning transmission electron microscope images which clearly reveal the presence of well-defined Ln segregation sites at the interfaces, and, moreover, reveal that these segregation sites are element-specific. While some results differ across the three research groups, the vast majority exhibits good reproducibility. |
| Databáze: | OpenAIRE |
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