Wafer bonding technology for optoelectronic integrated devices
| Autor: | Takeshi Kamijoh, H. Wada, Hironori Sasaki |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Bonding process
Materials science Wafer bonding business.industry ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Optoelectronic integrated circuits Laser Electronic Optical and Magnetic Materials law.invention Integrated devices Crystal Diffractive lens law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 43:1655-1663 |
| ISSN: | 0038-1101 |
| Popis: | Wafer bonding has been investigated as a key technology to integrate InP lasers on Si for optoelectronic integrated circuits. The bonding process has been optimized to allow the integration of InGaAsP/InP double-heterostructures (DHs) on Si with keeping the crystal qualities good enough to realize the lasers. As a result, room temperature continuous-wave (CW) operation of InP edge-emitting lasers has been achieved. In addition, as one of the building blocks to implement the optimal interconnections between Si LSIs, InP optical devices on Si integrated with the back-surface diffractive lenses have been demonstrated. A novel bonding process which allows an integration on structured wafers, such as Si LSI wafers, has also been proposed. The wafer bonding is thought to be a promising technique to implement optical interconnections between Si LSI chips. |
| Databáze: | OpenAIRE |
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