Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
| Autor: | Young-Chul Byun, Kwang-Seok Seo, Gwang-Ho Choi, Su-Keun Eom, Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Jae-Gil Lee, Dong-Hwan Kim, Seung-Hyun Roh |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor General Physics and Astronomy Heterojunction 02 engineering and technology Plasma 021001 nanoscience & nanotechnology 01 natural sciences law.invention Threshold voltage Atomic layer deposition Semiconductor law 0103 physical sciences Breakdown voltage Optoelectronics 0210 nano-technology Silicon oxide business |
| Zdroj: | Journal of the Korean Physical Society. 71:185-190 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.71.185 |
| Popis: | We have developed a nitrogen-incorporated silicon oxide (SiOxNy) deposition process using plasma enhanced atomic layer deposition (PEALD) for the gate insulator of recessed-gate Al-GaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. The SiOxNy film deposited on a recessed GaN surface exhibited a breakdown field of 13.2 MV/cm and a conduction band offset of 3.37 eV, which are the highest values reported for GaN MIS structures to the best of our knowledge. The fabricated normally-off transistor exhibited very promising characteristics such as a threshold voltage of 2.2 V, a maximum drain current density of 428 mA/mm, and a breakdown voltage of 928 V. |
| Databáze: | OpenAIRE |
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