| Autor: |
V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, N. S. Kovalchuk, Ya. A. Soloviev, D. V. Zhygulin, D. V. Shestovsky, Yu. N. Yankovski, D. I. Brinkevich |
| Rok vydání: |
2022 |
| Zdroj: |
Journal of Applied Spectroscopy. 89:498-504 |
| ISSN: |
0514-7506 |
| Popis: |
We studied the behavior of nitrogen in silicon dioxide films on single-crystal silicon substrates by the attenuated total reflection (ATR) method and time-of-flight secondary ion mass spectrometry. Nitrogen was introduced into a dielectric formed by pyrogenic oxidation at a temperature of 850 ºС in an atmosphere of wet oxygen by implantation of N+ ions with an energy of 40 keV at doses of 2.5‧1014 and 1.0‧1015 cm–2, followed by rapid thermal annealing at a temperature of 1000 or 1050 ºС with a duration of 15 s in air. Nitridization of some of the samples was carried out during thermal annealing in a nitrogen atmosphere with the addition of a small amount of oxygen at a temperature of 1200 ºС for 120 minutes. It is established that during heat treatments, the majority of nitrogen atoms diffuse to the SiО2/Si interface and accumulate in the near-boundary region of the oxide. The ATR spectra show an absorption band with maxima at ~2320 and 2360 cm–1, which is probably due to vibrations of double cumulative bonds of the O=Si=N− type. The formation of these bonds is due to the interaction of nitrogen with dangling bonds at the silicon-dielectric interface, as a result of which uncompensated or strained bonds are replaced by more stable ones. The resulting stronger chemical bonds prevent charge accumulation on the surface of the SiО2/Si interface. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
