20nm FinFET-based SRAM cell: Impact of variability and design choices on performance characteristics
| Autor: | Ulf Schlichtmann, Shushanik Karapetyan |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering Semiconductor technology Circuit performance business.industry Sram cell Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Integrated circuit 01 natural sciences 020202 computer hardware & architecture law.invention CMOS law 0103 physical sciences Limit (music) Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Static random-access memory business |
| Zdroj: | SMACD |
| DOI: | 10.1109/smacd.2017.7981615 |
| Popis: | The relentless scaling of semiconductor technology has resulted in dramatic performance improvements of Integrated Circuits (ICs). However, traditional planar CMOS technology seems to have reached its limit. To continue with Moore's law, FinFET technology has shown to be a viable solution. Process variations are still relevant, however. Therefore, it is crucial to study their impact on circuit performance. This paper explores design choices for 20nm FinFET-based SRAM cells and analyzes the impact of process variations on the performance characteristics of the SRAM cell. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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