Athermal annealing of phosphorus-ion-implanted silicon
| Autor: | David Donnelly, Jacob Grun, Charles Manka, Antonio Ting, Billy C. Covington, R. P. Fischer, Christopher L. Felix, Martin C. Peckerar, W. J. DeSisto |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Physics::Instrumentation and Detectors Annealing (metallurgy) business.industry viruses Metallurgy Analytical chemistry chemistry.chemical_element Laser law.invention Ion Condensed Matter::Materials Science Semiconductor Ion implantation chemistry law Electrical resistivity and conductivity Irradiation business |
| Zdroj: | Applied Physics Letters. 77:1997-1999 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | A 1 cm2 area in phosphorus-implanted silicon samples is annealed by irradiation of a much smaller 0.002 cm2 area with a single laser pulse. Resistivity of the annealed region is uniform and similar to that measured after thermal annealing. Electrically activated donors did not diffuse into the sample and only slightly towards the sample surface. The process is 100% reproducible. We present evidence that the annealing is not caused by heat. |
| Databáze: | OpenAIRE |
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