The effects of post heat treatment on ITO/AgAl/ITO/p-Si multilayer films

Autor: Aliyu Kabiru Isiyaku, Ahmad Hadi Ali, Nafarizal Nayan
Rok vydání: 2020
Předmět:
Zdroj: Journal of Physics: Conference Series. 1535:012005
ISSN: 1742-6596
1742-6588
DOI: 10.1088/1742-6596/1535/1/012005
Popis: For the past few decades, the quest for an improve indium tin oxide (ITO) films have attracted a lot of interest by scientists and industries for application in advanced optoelectronic devices. ITO/AgAl/ITO multilayer films were deposited on p-silicon (Si) substrates at room temperature by radio frequency (RF) and direct current (DC) magnetron sputtering respectively. The effects of post-heat (annealing) treatment on the structural, optical and electrical properties of the ITO/AgAl/ITO multilayer films were investigated at different temperature of 200 °C, 300 °C, 400 °C and 500 °C respectively. X-ray diffraction (XRD) results reveal an amorphous structure for the as-deposited film whereas the post annealed films show a polycrystalline and cubic bixbyite structure with preferential peaks orientation along ITO (222), Ag (111), and ITO (440) crystalline directions. Atomic force microscopy (AFM) analysis indicates a smoother surface morphology and improved grain size after post heat treatment. Ultraviolet-visible spectrophotometer measurements show a significant increase in optical transmittance spectra as the annealing temperature increases. Maximum transmittance peak of 87.2 % was obtained by film annealed at 500 °C. Four-point probe measurements exhibit a substantial decrease in sheet resistance with respect to increasing post-annealing temperature. The sheet resistance of the as-deposited film is about 7.85 Ω/sq and falls down to 3.23 Ω/sq as the post-heat temperature is increased to 500 °C. Compared to as-deposited film, the post annealed multilayer films optical and electrical properties have been successfully enhanced, fine turned and favourable for Si solar cell application.
Databáze: OpenAIRE
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