Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures

Autor:	S. S. Khludkov, D. L. Budnitskii, O.B. Koretskaya, A. I. Gossen
Rok vydání:	1998
Předmět:	Photocurrent Materials science Depletion region business.industry Doping General Physics and Astronomy Photodetector Optoelectronics Substrate (electronics) Conductivity business Acceptor Diode
Zdroj:	Russian Physics Journal. 41:357-360
ISSN:	1573-9228 1064-8887
Popis:	We propose a method for determining the behavior of the conductivity of high-resistance photosensitive films separated from the substrate by a space charge region. The method is based on measurement of the potential distribution ϕ(r) over the surface of an illuminated film which arises as the photocurrent flows through it. We have studied diode structures made ofn-GaAs, fabricated by doping with deep acceptor impurities which act as fast switches and photodetectors with high sensitivity in the ultraviolet region. The results are compared with literature data for iron-doped GaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78f05e8caa5f8ef80deb84479a2cc27f https://doi.org/10.1007/bf02766535 Zobrazit plný text záznamu Full text from SpringerLink