Influence of strain on semiconductor thin film epitaxy

Autor:	Eugene A. Fitzgerald, S. B. Samavedam, Ya-Hong Xie, L. M. Giovane
Rok vydání:	1997
Předmět:	Length scale Materials science Condensed matter physics business.industry Relaxation (NMR) Heterojunction Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films Crystallography Semiconductor Stress relaxation Dislocation Thin film business
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1048-1056
ISSN:	1520-8559 0734-2101
Popis:	Under typical growth conditions, strain levels greater than or equal to 10−4 are shown to influence thin film surface morphology and strain relaxation pathways. Misfit and threading dislocations in relaxed heterostructures produce long wavelength undulations on the surface and shallow depressions, respectively. Threading dislocation densities greater than ∼105–106 cm−2 in relaxed heterostructures must be due to increased impediments to dislocation motion, which in turn originate from the effect of the misfit dislocations on the surface morphology. Under typical growth conditions, the origin of strain-induced surface features can be identified by recognizing the length scale at which the features occur.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78df5fc33b198b7df32f661c13ddd55d https://doi.org/10.1116/1.580428 Zobrazit plný text záznamu