Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)

Autor:	Peng-Soon Lim, Liang-Gi Yao, Syun-Ming Jang, Y. Jin, Vincent S. Chang, S.-C. Chen, H.J. Tao, Fong-Yu Yen, Yong-Tian Hou, Mong-Song Liang, H.J. Lin, Chi Chun Chen, Peng-Fu Hsu, C.L. Hung, Jian-Yong Jiang
Rok vydání:	2006
Předmět:	Atomic layer deposition chemistry.chemical_compound Materials science chemistry Chemical engineering Nano chemistry.chemical_element Dielectric Silicate Hafnium
Zdroj:	ECS Transactions. 1:113-123
ISSN:	1938-6737 1938-5862
Popis:	A semi-empirical, stacked capacitor model was developed to calculate the dielectric constants (k) and deposition rates of hafnium silicate (HfSiO) deposited by nano-laminated atomic layer deposition (NL-ALD) from the HfO2 and SiO2 ALD cycles (m and n, respectively). The calculations agree well with the experimental data, with an accuracy of 90%. The model enables the deposition of HfSiO with desired thicknesses and any dielectric constants ranging from 7 to 19 using proper combinations of m and n. The systematic study on the effects of various combinations of m and n that give similar dielectric constants showed that increasing m and n enhances the dielectric scalability due to less defects formed at the high- k/IL oxide interface during NL-ALD, but degrades the electrical stability due to more severe charge trapping. Changing m and n has no significant effect on thermal stability and electron mobility.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78db6fafa7ddcb96b821044b353639e3 https://doi.org/10.1149/1.2209336 Zobrazit plný text záznamu