Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC
| Autor: | Martin A. Crimp, Philip G. Neudeck, Pirouz Pirouz, Clemens Burda, Kevin M. Speer |
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| Rok vydání: | 2007 |
| Předmět: |
Surface (mathematics)
Coalescence (physics) Chemistry business.industry Surfaces and Interfaces Substrate (electronics) Electron Electroluminescence Condensed Matter Physics Channelling Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics Microscopy Materials Chemistry Electrical and Electronic Engineering business Diode |
| Zdroj: | physica status solidi (a). 204:2216-2221 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200675446 |
| Popis: | p-n diodes were fabricated from 3C-SiC films heteroepitaxially grown atop on-axis, Si-face (0001) 4H-SiC mesa substrate arrays [P. G. Neudeck et al., Mater. Sci. Forum 433-436, 213 (2003); 527-529, 1335 (2006)]. Images taken by electroluminescence-based optical emission microscopy (ELOEM) and electron channelling contrast imaging (ECCI) revealed immobile linear features aligned along (110) directions; defects were expected on these particular devices, as the 3C films were grown on stepped 4H mesas. To explain the formation of these defects, we have used a procedure by which surface energies are calculated for terraces on a stepped 4H, Si-face surface to investigate their comparative stability; subsequently, we use energetic calculations to confirm the formation - and determine the orientation - of 3C nuclei on the more stable 4H terraces and to evaluate the nature of the coalescence of nuclei from neighbouring terraces. |
| Databáze: | OpenAIRE |
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