Thickness Scaling of Pb(Zr,Ti)O 3 Thin Films and Pt Electrodes for High Density FeRAM Devices
| Autor: | D-Y. Park, Chang Young Koo, Seung-Hyun Kim, H-J. Woo, Ju-Jin Lim, S-M. Ha, J. Ha, Cheol Seong Hwang |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials law.invention Stack (abstract data type) Control and Systems Engineering law Ferroelectric RAM Electrode Materials Chemistry Ceramics and Composites Optoelectronics Electrical and Electronic Engineering Thin film Crystallization Polarization (electrochemistry) business Scaling |
| Zdroj: | Integrated Ferroelectrics. 48:139-147 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/713718318 |
| Popis: | This article describes the scaling and performance issues for future high density ferroelectric non-volatile memories (FeRAM) using sub-100 nm Pb(Zr,Ti)O 3 thin films by chemical deposition process and ultra thin electrode stack. Two separate approaches are discussed. The first approach involves the scalability of electrode stack. It is observed that crystallization and ferroelectric behavior of PZT thin films were improved with increasing Pt thickness. However, PZT thin films till showed high ferroelectric performance even on 30 nm-thick Pt electrodes. The second approach presents high ferroelectric performance of the thickness scaled PZT thin films (∼50 nm) on 30 nm-thick Pt electrodes. The switching performance of these thickness scaled PZT thin films showed below 1 V operation with high polarization value (> 30 w C/cm 2 ), implying the possibility to realize 32Mb FRAM devices and beyond. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|