IR Emission of Single-Crystal Silicon Excited by Broadband Light
| Autor: | O. V. Degtyareva, Vladimir S. Gorelik, Yu. A. Novikov, E. L. Terpugov, V. V. Savranskiy |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Astrophysics::High Energy Astrophysical Phenomena Physics::Optics General Physics and Astronomy chemistry.chemical_element Astrophysics::Cosmology and Extragalactic Astrophysics 02 engineering and technology 01 natural sciences Spectral line symbols.namesake 0103 physical sciences Broadband Astrophysics::Solar and Stellar Astrophysics Emission spectrum Astrophysics::Galaxy Astrophysics 010302 applied physics Quantum optics business.industry 021001 nanoscience & nanotechnology Fourier transform chemistry Excited state symbols Optoelectronics 0210 nano-technology business Excitation |
| Zdroj: | Physics of Wave Phenomena. 26:207-213 |
| ISSN: | 1934-807X 1541-308X |
| DOI: | 10.3103/s1541308x18030056 |
| Popis: | Room-temperature mid-IR emission from single-crystal silicon exposed to broadband (320 to 700 nm) light with power up to 150 m W has been revealed by Fourier transform IR emission spectroscopy. It is shown that broadband optical excitation significantly enhances IR emission in comparison with thermal emission. Spectral lines of lattice vibrations caused by interaction between combinations of longitudinal and transverse optical or acoustic phonons are identified in experimental IR emission spectra. |
| Databáze: | OpenAIRE |
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