| Autor: |
M. L. Lovejoy, J. F. Klem |
| Rok vydání: |
1995 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:702 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.588140 |
| Popis: |
We report the molecular‐beam epitaxial growth and characterization of p‐type modulation‐doped AlGaAsSb/InGaSb quantum wells. Growth of AlGaAsSb with good compositional control was demonstrated with AlGaAs fractions up to 0.2. Characteristics of Schottky barrier contacts on AlGaSb and AlGaAsSb are compared. AlGaAs fractions of 0.1–0.15 in the doped barrier material of the modulation‐doped structures lead to a significant reduction in measured low‐field hole mobilities with respect to AlGaSb‐barrier structures, with no measurable increase in the two‐dimensional hole density. Incorporation of a thin AlGaSb spacer layer between the InGaSb quantum‐well and AlGaAsSb doped layer greatly improves the measured mobilities. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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