Back surface gettering and Cr out‐diffusion in VPE GaAs layers

Autor:	R. M. Malbon, J. D. Hong, Vaughn R. Deline, J. Peng, T. J. Magee, Charles A. Evans
Rok vydání:	1979
Předmět:	Chromium Materials science Physics and Astronomy (miscellaneous) chemistry Getter business.industry Annealing (metallurgy) chemistry.chemical_element Optoelectronics Epitaxy business
Zdroj:	Applied Physics Letters. 35:277-279
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.91070
Popis:	Mechanical back surface damage gettering has been investigated for improving the quality of GaAs substrates and VPE layers on semi‐insulating GaAs. It has been shown that the pregettering of substrates reduces the interfacial defect density and alters the level of Cr out‐diffusion into the VPE layer during growth. At a postdeposition anneal temperature of 800 °C, Cr out‐diffusion into the VPE layer is relatively suppressed in the pregettered substrate, while the ungettered sample shows larger concentrations of Cr within the epitaxial layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78b28e9aad4e7b3f741b6cf381114910 https://doi.org/10.1063/1.91070 Zobrazit plný text záznamu