Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
Autor: | Frederic Boeuf, Gerard Ghibaudo, Yahya Moubarak Meziani, J.-P. Cesso, Nina Dyakonova, A. El Fatimy, R. Tauk, Wojciech Knap, T. Skotnicki, Jerzy Łusakowski |
---|---|
Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Applied Physics Letters. 87:053507 |
ISSN: | 1077-3118 0003-6951 |
Popis: | Room-temperature magnetoresistance of nanometer bulk Si n-type metal-oxide semiconductor field-effect transistors was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 to 740 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic and the pocket effect and that for the strong inversion these two effects are of a comparable magnitude. |
Databáze: | OpenAIRE |
Externí odkaz: |