Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors

Autor:	Frederic Boeuf, Gerard Ghibaudo, Yahya Moubarak Meziani, J.-P. Cesso, Nina Dyakonova, A. El Fatimy, R. Tauk, Wojciech Knap, T. Skotnicki, Jerzy Łusakowski
Rok vydání:	2005
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Magnetoresistance business.industry Transistor law.invention Semiconductor law Ballistic conduction MOSFET Field-effect transistor Nanometre business
Zdroj:	Applied Physics Letters. 87:053507
ISSN:	1077-3118 0003-6951
Popis:	Room-temperature magnetoresistance of nanometer bulk Si n-type metal-oxide semiconductor field-effect transistors was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 to 740 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic and the pocket effect and that for the strong inversion these two effects are of a comparable magnitude.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78b128292bd72f78de898d534ad07925 https://doi.org/10.1063/1.1993747 Zobrazit plný text záznamu