Thermal Oxide Grown on High Index Silicon Wafers

Autor:	Francisco Javier De la Hidalga Wade, Ramiro Rogelio Rodríguez, Pedro Rosales, Don L. Kendall, Wilfrido Calleja Arriaga, Alfonso Torres
Rok vydání:	2007
Předmět:	Surface (mathematics) Work (thermodynamics) Materials science Silicon business.industry High index Oxide chemistry.chemical_element chemistry.chemical_compound chemistry Thermal oxide Surface roughness Optoelectronics Wafer business
Zdroj:	ECS Transactions. 3:9-14
ISSN:	1938-6737 1938-5862
Popis:	Even though the MOS technology was developed originally on the (0 0 1)-Si surface, some studies have shown that several MOS parameters can be optimized using other silicon orientations [1-3]. (1 1 4) and (5 5 12) Si surfaces presents a periodical surface roughness that may have technological applications [4]; however, the oxide grown on these surface orientations has not been studied. In this work we investigate the behavior of the oxide thickness in high index Si and compare it to oxides grown on standard surface orientations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78b0178efc5e09c4dd57ae1289969791 https://doi.org/10.1149/1.2789274 Zobrazit plný text záznamu