InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 $\mu\hbox{m}$
| Autor: | Chee Hing Tan, D.S.G. Ong, Y. L. Goh, Jo Shien Ng, Shiyong Zhang, John P. R. David |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Superlattice Avalanche photodiode Electronic Optical and Magnetic Materials Photodiode law.invention chemistry.chemical_compound Responsivity Optics chemistry law Indium phosphide Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Indium gallium arsenide Dark current |
| Zdroj: | IEEE Transactions on Electron Devices. 58:486-489 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | An avalanche photodiode (APD) using a InAlAs multiplication region and a type-II InGaAs/GaAsSb superlattice as the absorber (both lattice matched to InP) is reported. An optical and electrical characterization of the photodiode is performed. The APD exhibited an absorption cutoff wavelength of 2.5 μm, which is expected from the InGaAs/GaAsSb superlattice. A responsivity of 0.47 A/W (without gain) for the APD at a 2004-nm wavelength was demonstrated. The APD breakdown voltage showed a weak temperature dependence of ~40 mV/K, as a result of the excellent temperature stability in InAlAs. |
| Databáze: | OpenAIRE |
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