Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
Autor: | B. V. Volovik, A. F. Tsatsul’nikov, Nikolai N. Ledentsov, M. V. Maksimov, A. Yu. Chernyshov, M. V. Belousov, D. A. Bedarev, Sergei Ivanov, Yu. G. Musikhin, P. S. Kop’ev, B. Ya. Meltser, V. A. Solov’ev |
---|---|
Rok vydání: | 1999 |
Předmět: | |
Zdroj: | Semiconductors. 33:886-888 |
ISSN: | 1090-6479 1063-7826 |
Popis: | It is shown that an array of two-dimensional islands is formed during the growth of ultrathin (∼1.5 monolayers) InSb layers on a GaSb (100) surface by molecular beam epitaxy. After the deposition of several InSb layers separated by narrow barriers, islands of subsequent rows are formed on top of islands of the first row (vertical correlation effect). The formation of islands is confirmed by analysis of the photoluminescence spectra. |
Databáze: | OpenAIRE |
Externí odkaz: |