Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface

Autor:	B. V. Volovik, A. F. Tsatsul’nikov, Nikolai N. Ledentsov, M. V. Maksimov, A. Yu. Chernyshov, M. V. Belousov, D. A. Bedarev, Sergei Ivanov, Yu. G. Musikhin, P. S. Kop’ev, B. Ya. Meltser, V. A. Solov’ev
Rok vydání:	1999
Předmět:	Surface (mathematics) Materials science Photoluminescence Condensed matter physics business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Monolayer Optoelectronics business Deposition (law) Molecular beam epitaxy
Zdroj:	Semiconductors. 33:886-888
ISSN:	1090-6479 1063-7826
Popis:	It is shown that an array of two-dimensional islands is formed during the growth of ultrathin (∼1.5 monolayers) InSb layers on a GaSb (100) surface by molecular beam epitaxy. After the deposition of several InSb layers separated by narrow barriers, islands of subsequent rows are formed on top of islands of the first row (vertical correlation effect). The formation of islands is confirmed by analysis of the photoluminescence spectra.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78a3fb01e2c7d64d5ea16aaee8fc1792 https://doi.org/10.1134/1.1187805 Zobrazit plný text záznamu Plný text ve formátu PDF