Leakage-current characteristics of sol–gel-derived Ba1-xSrxTiO3 (BST) thin films
| Autor: | Soo-Ik Jang, Hyun Min Jang |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Spin coating
Materials science Process Chemistry and Technology Analytical chemistry chemistry.chemical_element Dielectric Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal Atmosphere chemistry visual_art Electrode Materials Chemistry Ceramics and Composites visual_art.visual_art_medium Thin film Sol-gel |
| Zdroj: | Ceramics International. 26:421-425 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/s0272-8842(99)00073-5 |
| Popis: | Thin films of Ba 0.5 Sr 0.5 TiO 3 (BST) were fabricated on RuO 2 /Ru/SiO 2 /Si substrates by spin coating multicomponent sol prepared using metal alkoxides. To analyze the surface effect of the dielectric film on the leakage current characteristics required for DRAM applications, post-annealing was carried out under O 2 or Ar atmosphere. Based on AES and RBS data, we have concluded that doubly ionized oxygen vacancies are readily generated on the outermost surface of the BST thin film post-annealed under Ar atmosphere. The leakage current densities of the BST thin film post-annealed with O 2 and with Ar gases are approximately 1×10 −6 A/cm 2 and 4.6×10 −6 A/cm 2 at 1V, respectively. This observation was interpreted in terms of (i) the increase in the tunneling current caused by the decrease in the depletion width at the surface region under Ar atmosphere and (ii) the effect from the bottom electrode under oxidative environment. |
| Databáze: | OpenAIRE |
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