Preparation and characterization of CuAlxGa1−xSe2alloy layers grown by low‐pressure metalorganic vapor phase epitaxy

Autor:	Shigehiro Isomura, Tetsuya Kariya, Satoru Matsumoto, Sho Shirakata, Hirofumi Higuchi, Hisayuki Nakanishi, Yoshiyuki Harada, Shigefusa F. Chichibu
Rok vydání:	1996
Předmět:	Materials science Photoluminescence Exciton Energy level splitting Alloy Analytical chemistry General Physics and Astronomy engineering.material Epitaxy Acceptor Condensed Matter::Materials Science Ultimate tensile strength engineering Ionization energy
Zdroj:	Journal of Applied Physics. 80:3338-3345
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363245
Popis:	CuAlxGa1−xSe2 alloy layers were successfully grown on GaAs(001) by low‐pressure metalorganic vapor phase epitaxy. The distribution coefficient of Al was unity. All alloy layers had their c‐axis normal to the substrate plane. Exciton resonance energies were determined as a function of x by means of photoreflectance measurements. A quadratic dependence of exciton energies on x was confirmed. The spin‐orbit splittings of the epilayers were approximately the same as that of bulk crystals. The magnitudes of crystal‐field splittings were larger than that of bulk crystals, and this was explained in terms of residual tensile biaxial strain in the epilayers. The color of the low‐temperature photoluminescence (PL) changed from red to crimson, orange, yellow, green, and bluish‐purple with increasing x. A peak due to a free‐to‐acceptor transition was dominant in the PL spectra of the alloy layers. The acceptor ionization energy increased with increasing x, and the result may reflect an increase of the hole effective ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78967e2000091934daa3a9750ed4c1a8 https://doi.org/10.1063/1.363245 Zobrazit plný text záznamu