Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Autor: Y. Irokawa, Fan Ren, Yong Jo Park, K.H. Baik, Stephen J. Pearton, Soon-oh Park
Rok vydání: 2003
Předmět:
Zdroj: Solid-State Electronics. 47:1533-1538
ISSN: 0038-1101
DOI: 10.1016/s0038-1101(03)00071-6
Popis: A comparison was made of the forward current–voltage characteristics of bulk GaN Schottky and p–n junction rectifiers using a quasi-three-dimensional simulator. The model includes incomplete ionization of the deep Mg acceptor (175 meV) in the p+-GaN side of the junction and the temperature dependence of mobility and GaN band gap. The forward turn-on voltages, VF, decrease with increasing temperature for both types of rectifier and are ∼2.5 V at 100 A cm−2 at 573 K for the junction diodes and ⩽1 V under similar conditions for the Schottky diodes. The effect of p-layer thickness and doping in the p–n junction was also investigated.
Databáze: OpenAIRE