Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers
Autor: | Y. Irokawa, Fan Ren, Yong Jo Park, K.H. Baik, Stephen J. Pearton, Soon-oh Park |
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Rok vydání: | 2003 |
Předmět: |
Materials science
business.industry Electrical junction Schottky barrier Schottky diode Condensed Matter Physics P–n junction isolation Metal–semiconductor junction Electronic Optical and Magnetic Materials Materials Chemistry Optoelectronics Electrical and Electronic Engineering business p–n junction p–n diode Diode |
Zdroj: | Solid-State Electronics. 47:1533-1538 |
ISSN: | 0038-1101 |
DOI: | 10.1016/s0038-1101(03)00071-6 |
Popis: | A comparison was made of the forward current–voltage characteristics of bulk GaN Schottky and p–n junction rectifiers using a quasi-three-dimensional simulator. The model includes incomplete ionization of the deep Mg acceptor (175 meV) in the p+-GaN side of the junction and the temperature dependence of mobility and GaN band gap. The forward turn-on voltages, VF, decrease with increasing temperature for both types of rectifier and are ∼2.5 V at 100 A cm−2 at 573 K for the junction diodes and ⩽1 V under similar conditions for the Schottky diodes. The effect of p-layer thickness and doping in the p–n junction was also investigated. |
Databáze: | OpenAIRE |
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