Ultrathin Si Thin-Film Transistor on Glass

Autor:	Chuan Che Wang, Jin Jang, Seung Hyun Park, Carlo Kosik Williams, Moon Hyo Kang, Jeffrey Scott Cites, Sung Eun Ahn, Jun Hyuk Cheon
Rok vydání:	2009
Předmět:	Electron mobility Materials science business.industry Electronic Optical and Magnetic Materials Threshold voltage Ion implantation Thin-film transistor Anodic bonding Electronic engineering Optoelectronics Field-effect transistor Dry etching Electrical and Electronic Engineering Thin film business
Zdroj:	IEEE Electron Device Letters. 30:145-147
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2008.2010065
Popis:	We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass (SiOG) was controlled down to 10 nm by dry etching. The p-channel SiOG TFTs with 10-nm-thick Si exhibited the field-effect mobility of 134.9 cm2/Vmiddots, threshold voltage of -1.5 V, and gate voltage swing of 0.13 V/dec. The TFTs were found to be stable against gate bias stress of +30 or -30 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::787a27138323e725e13777a83583160e https://doi.org/10.1109/led.2008.2010065 Zobrazit plný text záznamu