Fabrication of Si:H Alloy with Plenty of –SiH3 by Reactive Sputtering onto Low Temperature Substrate

Autor:	Akio Hiraki, Masao Tokumura, Tatsuro Miyasato, Yuji Abe, Takeshi Imura
Rok vydání:	1983
Předmět:	Fabrication Materials science Hydrogen Metallurgy Alloy General Engineering Analytical chemistry General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element Substrate (electronics) engineering.material Microcrystalline chemistry Sputtering engineering Cooling down
Zdroj:	Japanese Journal of Applied Physics. 22:L580
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.22.l580
Popis:	Si:H alloy with strong infrared absorption bands due to the –SiH3 group was fabricated by means of a planar magnetron r.f. sputtering technique in hydrogen gas onto a low temperature substrate. The content of the –SiH3 group increases greatly by cooling down the single crystal silicon wafer substrate to about -60°C. The deposition rate was 1200 Å/min. The deposit Si:H alloy is composed of microcrystalline grains with a uniform polyhedron or spherical shape and a uniform diameter of 100 Å.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78788e32e2f325f4dd328c50a39dfcb3 https://doi.org/10.1143/jjap.22.l580 Zobrazit plný text záznamu